Lam Research Corporation (NASDAQ:LRCX – Get Free Report) declared a quarterly dividend on Thursday, August 27th. Shareholders of record on Wednesday, September 23rd will be given a dividend of 0.33 per share by the semiconductor company on Wednesday, October 14th. This represents a c) annualized dividend and a yield of 0.4%. The ex-dividend date is Wednesday, September 23rd. This is a 26.9% increase from Lam Research’s previous quarterly dividend of $0.26.
Lam Research has increased its dividend by an average of 0.1%annually over the last three years and has increased its dividend annually for the last 10 consecutive years. Lam Research has a payout ratio of 25.9% indicating that its dividend is sufficiently covered by earnings. Equities research analysts expect Lam Research to earn $11.35 per share next year, which means the company should continue to be able to cover its $1.04 annual dividend with an expected future payout ratio of 9.2%.
Lam Research Stock Performance
Shares of LRCX stock opened at $301.90 on Friday. The firm has a market capitalization of $377.77 billion, a price-to-earnings ratio of 52.41, a PEG ratio of 1.26 and a beta of 1.84. The company has a current ratio of 2.63, a quick ratio of 1.91 and a debt-to-equity ratio of 0.30. The business’s 50-day moving average price is $330.43 and its 200-day moving average price is $289.14. Lam Research has a 12 month low of $94.11 and a 12 month high of $438.50.
Lam Research Company Profile
Lam Research Corporation (NASDAQ: LRCX) is a global supplier of wafer fabrication equipment and services to the semiconductor industry. Founded in 1980 by David K. Lam and headquartered in Fremont, California, the company develops and manufactures systems used in multiple stages of semiconductor device production, including thin film deposition, plasma etch, wafer cleaning and related process modules and automation.
Lam’s product portfolio covers core process technologies employed by logic and memory manufacturers, with equipment designed to support advanced-node patterning, 3D NAND and other emerging device architectures.
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